| ۱ | Modeling of a Vertical Tunneling Transistor Based on Graphene–MoS2 Heterostructure | Ashkan Horri-Rahim Faez- Mahdi Pourfath-Ghafdar Darvish | IEEE Transactions on Electron Devices | 2017 |
| ۲ | A computational study of vertical tunneling transistors based on graphene-WS2 heterostructure | Ashkan Horri-Rahim Faez- Mahdi Pourfath-Ghafdar Darvish | Journal of Applied Physics | 2017 |
| ۳ | Numerical simulation of vertical tunneling transistor with bilayer graphene as source and drain regions | Ashkan Horri-Rahim Faez- Ghafdar Darvish | (physica status solidi (a | 2017 |
| ۴ | Analysis of a Graphane p—n Junction Using the Green Function Method | Ashkan Horri-SZ Mirmoieni | Chinese Physics Letters | 2014 |
| ۵ | Simulation of deep level traps effects in quantum well transistor laser | Ashkan Horri-Rahim Faez | Journal of Computational Electronics | 2013 |
| ۶ | Large signal analysis of double quantum well transistor laser | Ashkan Horri-Rahim Faez | Optical and Quantum Electronics | 2013 |
| ۷ | Analysis of Deep Level Trap Effects in Transistor Lasers. | Ashkan Horri-SZ Mirmoieni-Rahim Faez | Lasers in Engineering | 2013 |
| ۸ | Large Signal Circuit Model of Two-Section Gain Lever Quantum Dot Laser | Ashkan Horri-SZ Mirmoieni-Rahim Faez | Chinese Physics Letters | 2012 |
| ۹ | The noise equivalent circuit model of quantum-dot lasers | Ashkan Horri-SZ Mirmoieni-Rahim Faez | Journal of Russian Laser Research | 2012 |
| ۱۰ | Analysis of carrier dynamic effects in transistor lasers | Ashkan Horri-SZ Mirmoieni-Rahim Faez | Optical Engineering | 2012 |
| ۱۱ | Relative intensity noise study in two mode quantum dot laser | Ashkan Horri-SZ Mirmoieni-Rahim Faez | Optica Applicata | 2011 |
| ۱۲ | Small signal circuit modeling for semiconductor self-assembled quantum dot laser | Ashkan Horri-Rahim Faez | Optical Engineering | 2011 |